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And if you think that was crappy science journalism, The Telegraph goes so far to insists it's got something to do with black holes

... PDF file (set resolution 100% for the last 2 pages in 3dim.pdf) 3-dim crystals electronic bands the shape of bands 2-dim (see pictures above) Notes from ...

Identification and design principles of low hole effective mass p-type transparent conducting oxides | Nature Communications

The carrier effective mass as a function of strain ɛy for ɛx = 0%, 4%, 8% and 12% (from left to right). The electron effective mass at K(1/3, ...

Effective masses and complexity factor at 300 K from BoltzTraP for some relatively simple structures CdTe (a–e) and AlAs (f–j). a, f Computed electronic ...

... effect represented by the electron phase velocity in the gate to the present model offers better fitting process of tunneling currents especially at ...

(a) Dependence of the electron effective mass on the quantum well width, at Г valley. (b) Dependence of the electron effective mass on the quantum well ...

(a) Effective mass of the electron band at M as a function of doping; me is the mass of free electrons. The data points of K-dosed FeSe were obtained by the ...

(a) 3D plot of the lower conduction sub-band electron effective mass versus alloys compositions x(N) and y(Bi) varying from 0 to 0.05.

Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga 1−x As/GaAs quantum wells by ...

And if you think that was crappy science journalism, The Telegraph goes so far to insists it's got something to do with black holes

(a) The electron and hole effective mass at K and Γ points as a function of biaxial strain (ɛxy = ɛx = ɛy); (b) the electron and hole mobility ...

PDF-file phys208-2005.02.28.pdf combining all the snapshots from monday 2005.02.28. Fermions, antisymmetry, Pauli exclusion. States available for Fermi gas

D.T.N. de Lang Scientific Meeting of the FOM Work Community for Condensed Matter Veldhoven, The Netherlands, 19-20 December 2000 [pdf] (125 kB).

Fig. 3. (a) Dispersion relations En±(k) of GaN.023As.937Bi.040 in Δ-, Λ- and Σ-directions (n = cb, hh, lh and so). (b) Changes of effective masses ...

... a spherical volume of the crystallite and the mass of electron and hole is replaced with effective masses (me and mh) to define the wave function [10].

(a) Electron band near the M-point at kz=0 (π) before surface electron doping. Overlaid on each plot is a parabolic fit used in extracting the effective ...

Band structure, m*c and m*S versus Fermi level, and N∗vK∗ N v * K * at 300 K versus Fermi level, and valence and conduction band Fermi surfaces for PbTe ...

High resolution cross-sectional transmission electron microscopy (HR-TEM) micrograph of the MOSCAP device dielectric layers, showing an interfacial SiOx ...

Figure 1. Quantum confinement is responsible for the increase of energy difference between energy states and bandgap [8].

OSA | Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer

Fig. 1: Electrical field strength E of an electromagnetic sine wave. Right side: Vector field of E in the x-y plane

More .... on Thermoconductivity coefficient kappa thermconduct.jpg. PDF-file phys208-2005.02.21.pdf combining all the snapshots from monday 2005.02.21,

Gate stack high resolution cross-sectional transmission electron microscopy (HR-TEM) micrographs of MOSFET devices: (a) device A, (b) device B, ...

Kayanuma accounted for the electron-hole spatial correlation effect [11] and modified the Brus Equation. Based on the modified equation, the size dependence ...